US Patent Issued to UNITED MEMORY TECHNOLOGY (JIANGSU) on March 17 for "Method of fabricating a 3D NAND flash memory with increased data retention capability" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,655, issued on March 17, was assigned to UNITED MEMORY TECHNOLOGY (JIANGSU) Ltd. (Wuxi, China).

"Method of fabricating a 3D NAND flash memory with increased data retention capability" was invented by Wei Gao (Wuxi, China) and Nyu Shen (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D NAND flash memory device and fabricating method thereof, comprises: First, a semiconductor substrate layer is provided, wherein cell isolation structures, channel structures and source lead-out spaces are formed on the semiconductor substrate layer, with the cell isolation structures including cell isolation layers and memory cell-occupied spaces. First ...