ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,232, issued on March 24, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).

"Semiconductor-element-including memory device" was invented by Nozomu Harada (Tokyo) and Koji Sakui (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic flash memory cell includes an Si base material formed of a first channel region and a second channel region. In the Si base material, a first gate insulating layer surrounds the first channel region, and a second gate insulating layer surrounds the second channel region. A first gate conductor layer surrounds the first gate insulating layer, and a second gate conductor layer surrounds the sec...