US Patent Issued to UNISANTIS ELECTRONICS SINGAPORE on March 24 for "Memory device using semiconductor element" (Japanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,186, issued on March 24, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).

"Memory device using semiconductor element" was invented by Masakazu Kakumu (Chiyoda-ku, Japan), Koji Sakui (Chiyoda-ku, Japan) and Nozomu Harada (Chiyoda-ku, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a memory semiconductor device including an access transistor, in which an n-type semiconductor layer is formed on a p-type semiconductor region provided on a substrate; a first p-type semiconductor layer that has a columnar shape exists in a vertical direction from a portion of the n-type semiconductor layer; an insulating layer that ...