US Patent Issued to UNISANTIS ELECTRONICS SINGAPORE on July 7 for "Semiconductor memory cell having two gates and one channel layer" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,183, issued on July 7, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).

"Semiconductor memory cell having two gates and one channel layer" was invented by Masakazu Kakumu (Tokyo), Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor memory device, an n-type semiconductor layer is formed on a p-type semiconductor region on a substrate, a p-type first semiconductor layer having a columnar shape and concave top surface extends vertically from part of the n-type semiconductor layer, the p-type first semiconductor layer and n-type semiconductor layer are partially covered with ...