ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,731, issued on April 7, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Memory device using semiconductor element" was invented by Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a page made up of plural memory cells arranged in a column on a substrate, and a page write operation is performed to hold positive hole groups generated by an impact ionization phenomenon, in a channel semiconductor layer by controlling voltages applied to a first gate conductor layer, a second gate conductor layer, a first impurity region, and a second impurity region of each memor...