US Patent Issued to Toyoda Gosei on Nov. 3 for "Semiconductor device and method for producing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,355, issued on Nov. 3, was assigned to Toyoda Gosei Co. Ltd. (Kiyosu-shi, Japan).

"Semiconductor device and method for producing semiconductor device" was invented by Tsutomu Ina (Kiyosu, Japan) and Takatomi Izumi (Kiyosu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of trench gate type is formed of a group III nitride semiconductor. The semiconductor device has a substrate, a first layer, a second layer, and a third layer accumulated in this order, and further has a trench penetrating through the third layer and the second layer and reaching the first layer. A side surface of the trench, exposed to the second layer, is...