US Patent Issued to Tower Semiconductor on June 23 for "Asymmetric single-channel floating gate memristor" (Israeli Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,612, issued on June 23, was assigned to Tower Semiconductor Ltd. (Migdal Haemek, Israel).

"Asymmetric single-channel floating gate memristor" was invented by Evgeny Pikhay (Afula, Israel), Michael Yampolsky (Migdal Haemek, Israel) and Yakov Roizin (Afula, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single-channel, single-poly floating gate (EEPROM-type) memristor including asymmetric source/drain-to-gate coupling and an asymmetric channel doping pattern. Asymmetric source/drain-to-gate coupling is achieved by configuring the drain, source and floating gate such that the gate-to-drain capacitance is greater than the gate-to-source capacit...