US Patent Issued to Tokyo Electron on Sept. 8 for "Substrate processing method and plasma processing apparatus" (Japanese, American Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,764, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and plasma processing apparatus" was invented by Takuma Sato (Hillsboro, Ore.), Shota Yoshimura (Miyagi, Japan), Motoki Noro (Miyagi, Japan), Hsinkai Wang (Miyagi, Japan) and Kota Oikawa (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes: (a) providing a substrate including a first region containing a first material including silicon and a second region containing a second material different from the first material; (b) etching the second region while forming a metal-containing layer on the first region,...