ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,186, issued on Sept. 22, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Shuto Watanabe (Yamanashi, Japan) and Yuki Osada (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus comprises a processing chamber configured to form a processing space, an application electrode disposed on one side of the processing space and connected to a high-frequency power supply, a counter electrode disposed on the other side of the processing space, and a phase control circuit configured to include a semiconductor switch and connected to the counter elect...