US Patent Issued to Tokyo Electron on Sept. 1 for "Method of manufacturing a gate-all-around transistor using support cantilevers on opposing ends of a multilayered stack" (Texas, Florida Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,244, issued on Sept. 1, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method of manufacturing a gate-all-around transistor using support cantilevers on opposing ends of a multilayered stack" was invented by H. Jim Fulford (Marianna, Fla.) and Mark I. Gardner (Cedar Creek, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming on a patterned multilayered stack including sacrificial layers alternatingly stacked with channel layers on a substrate, the patterned multilayered stack having opposing sidewalls and opposing ends. Cantilever supports are formed on the substrate, each cantilever sup...