US Patent Issued to Tokyo Electron on Oct. 6 for "Catalyst-enhanced chemical vapor deposition" (American, Japanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,701, issued on Oct. 6, was assigned to Tokyo Electron Ltd. (Tokyo).

"Catalyst-enhanced chemical vapor deposition" was invented by Kai-Hung Yu (Albany, N.Y.), Hiroaki Niimi (Albany, N.Y.), Robert D. Clark (Fremont, Calif.) and Tadahiro Ishizaka (Nirasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for processing a substrate that includes: treating the substrate with a halogen-containing catalyst, the substrate including a semiconductor layer, a dielectric layer disposed over the semiconductor layer, a recess formed in the dielectric layer, and a layer of a first metal disposed between the dielectric layer and the semiconductor ...