US Patent Issued to Tokyo Electron on Oct. 27 for "Lower electrode mechanism and substrate processing method" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,480, issued on Oct. 27, was assigned to Tokyo Electron Ltd. (Tokyo).

"Lower electrode mechanism and substrate processing method" was invented by Naoki Matsumoto (Miyagi, Japan), Mitsunori Ohata (Miyagi, Japan), Masataka Masuyama (Miyagi, Japan) and Naoki Mihara (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a lower electrode mechanism for plasma processing, the lower electrode mechanism including: a base portion to which radio-frequency power is applied during the plasma processing; a dielectric portion disposed at an upper surface of the base portion; and an induction heating mechanism, in which the induction heatin...