ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,826, issued on Oct. 20, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma control method, plasma processing apparatus and plasma processing system" was invented by Yohei Matsumoto (Iwate, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma control method includes: providing a plasma processing apparatus including a control unit and a process unit, receiving an input of a recipe in which values of a plurality of parameters are set for each processing step; determining a value of a variable parameter based on a progress state of the film forming processing when the plurality of parameters of the recipe include the variable parameter; and ...