US Patent Issued to Tokyo Electron on Nov. 3 for "Etching method and plasma processing apparatus" (Japanese, American Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,785,046, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method and plasma processing apparatus" was invented by Ryo Matsubara (Albany, N.Y.), Koki Mukaiyama (Miyagi, Japan), Maju Tomura (Miyagi, Japan), Yoshihide Kihara (Miyagi, Japan), Satoshi Ohuchida (Miyagi, Japan) and Takuto Kikuchi (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an etching method that includes: (a) preparing a substrate, the substrate including a first region and a second region below the first region, the first region containing a first material and having at least one opening, the second region containing a second material that i...