US Patent Issued to Tokyo Electron on May 26 for "Methods and devices for improving bond strength of diffusion barriers" (American, Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,642,154, issued on May 26, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods and devices for improving bond strength of diffusion barriers" was invented by Adam Gildea (Albany, N.Y.) and Satohiko Hoshino (Kumamoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and corresponding methods of manufacture are disclosed. The methods include forming a first layer on a first substrate, treating the first layer with a nitrogen-based plasma to form a first type of dangling bonds, treating the first layer with an oxygen-based plasma to transform the first type of dangling bonds into a second type of dangling bonds, and treating the ...