US Patent Issued to Tokyo Electron on May 26 for "Film forming method and film forming apparatus" (Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,769, issued on May 26, was assigned to Tokyo Electron Ltd. (Tokyo).

"Film forming method and film forming apparatus" was invented by Tuhin Shuvra Basu (Yamanashi, Japan), Hiroto Fujikawa (Yamanashi, Japan), Yutaka Motoyama (Yamanashi, Japan) and Keita Kumagai (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film forming method for forming a silicon film on a substrate, includes preparing a substrate having a first film and a second film on a surface thereof, supplying a growth inhibiting gas that inhibits growth of the silicon film to the substrate, to cause physical adsorption of the growth inhibiting gas on the first film, and for...