US Patent Issued to Tokyo Electron on May 19 for "Plasma processing method and plasma processing system" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,436, issued on May 19, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing system" was invented by Takahiro Yonezawa (Kurokawa-gun, Japan) and Kenta Ono (Kurokawa-gun, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a plasma processing method performed with a plasma processing apparatus including a chamber. The method includes: (a) preparing a substrate on a substrate support in the chamber, the substrate including an etching target film and a metal-containing film disposed on the etching target film, the metal-containing film including a side face defining at least one opening on the etching ...