ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,585, issued on May 12, was assigned to Tokyo Electron Ltd. (Tokyo).
"Selective atomic layer etch of Si-based materials" was invented by Mehrdad Rostami (Albany, N.Y.), Yu-Hao Tsai (Albany, N.Y.) and Toru Hisamatsu (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a substrate that includes: forming a photoresist layer including a metal and oxygen over a substrate including silicon; patterning the photoresist layer using an extreme ultraviolet (EUV) photolithographic process, a portion of the substrate being exposed after the patterning; and performing an atomic layer etching (ALE) process to etch the substrate selecti...