ALEXANDRIA, Va., May 12 -- United States Patent no. 12,624,456, issued on May 12, was assigned to Tokyo Electron Ltd. (Tokyo).

"Film-forming method and film-forming apparatus" was invented by Hitoshi Kato (Iwate, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film-forming method for forming a film on a substrate includes: (A) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging a film-forming gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism; and (B) after (A), adjusting a film th...