US Patent Issued to Tokyo Electron on March 31 for "Selective gas phase etch of silicon germanium alloys" (American, Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,634, issued on March 31, was assigned to Tokyo Electron Ltd. (Tokyo).

"Selective gas phase etch of silicon germanium alloys" was invented by Toshiki Kanaki (Albany, N.Y.), Subhadeep Kal (Albany, N.Y.), Aelan Mosden (Albany, N.Y.), Ivo Otto IV (Albany, N.Y.), Masashi Matsumoto (Hillsboro, Ore.) and Shinji Irie (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for selective etching of one layer or material relative to another layer or material adjacent thereto. In an example, a SiGe layer is etched relative to or selective to another silicon containing layer which either contains no germanium or geranium in an amount less than t...