US Patent Issued to Tokyo Electron on March 3 for "Semiconductor structure having stacked gates and method of manufacture thereof" (New York, Vermont, California Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,651, issued on March 3, was assigned to Tokyo Electron Ltd. (Tokyo).

"Semiconductor structure having stacked gates and method of manufacture thereof" was invented by Jeffrey Smith (Clifton Park, N.Y.), Lars Liebmann (Mechanicville, N.Y.), Daniel Chanemougame (Niskayuna, N.Y.), Paul Gutwin (Williston, Vt.), Kandabara Tapily (Mechanicville, N.Y.), Subhadeep Kal (Albany, N.Y.) and Robert Clark (Livermore, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the present disclosure provide a method, which includes providing a semiconductor structure including a first lower semiconductor device and a first upper semiconductor device stacked ve...