US Patent Issued to Tokyo Electron on March 24 for "Sacrificial gate capping layer for gate protection during source/drain contact opening" (New York, Texas Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,262, issued on March 24, was assigned to Tokyo Electron Ltd. (Tokyo).

"Sacrificial gate capping layer for gate protection during source/drain contact opening" was invented by Yun Han (Albany, N.Y.), Eric Chih-Fang Liu (Albany, N.Y.), Kai-Hung Yu (Albany, N.Y.), Shihsheng Chang (Albany, N.Y.) and Alok Ranjan (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method including providing a substrate including metal gate stacks and source/drain contact regions in alternating arrangement along a surface of the substrate, each of the source/drain contact regions being recessed within a respective opening between adjacent metal gate stacks suc...