US Patent Issued to Tokyo Electron on March 17 for "Next generation bonding layer for 3D heterogeneous integration" (New York Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,577,665, issued on March 17, was assigned to Tokyo Electron Ltd. (Tokyo).

"Next generation bonding layer for 3D heterogeneous integration" was invented by Kandabara Tapily (Albany, N.Y.), Soo Doo Chae (Albany, N.Y.), Satohiko Hoshino (Albany, N.Y.), Hojin Kim (Albany, N.Y.) and Adam Gildea (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Devices and methods for forming semiconductor devices are disclosed. The semiconductor device can include a plurality of semiconductor wafers. The plurality of semiconductor wafers can have a dielectric bonding layer disposed thereupon. The dielectric bonding layers can be treated to increase a bonding ener...