US Patent Issued to Tokyo Electron on March 17 for "Etching method and etching apparatus" (Japanese, American Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,160, issued on March 17, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method and etching apparatus" was invented by Takuji Sako (Nirasaki City, Japan), Kyohei Noguchi (Nirasaki City, Japan), Masaki Hosono (Nirasaki City, Japan), Masahiro Yamamoto (Minato-ku, Japan) and Julen Arozamena (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method of etching silicon formed on a side surface of a recess that exists in a substrate includes: forming an oxide film on a surface of the silicon by performing a radical oxidation processing on the substrate; performing a chemical processing with a gas on the oxide film; and removing ...