US Patent Issued to Tokyo Electron on June 9 for "Method for etching a layer through a patterned mask layer" (New York Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,979, issued on June 9, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method for etching a layer through a patterned mask layer" was invented by Kangyi Lin (Albany, N.Y.) and Peng Wang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device, where the method includes loading a substrate into a plasma chamber, the substrate including a patterned mask layer with an opening exposing a layer-to-be-patterned; and performing a number of cycles of a first plasma etch process, the first plasma etch process including: a first deposition step to conformally deposit a layer including an organic material includ...