US Patent Issued to Tokyo Electron on June 23 for "Sidewall inorganic passivation for dielectric etching via surface modification" (New York Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,893, issued on June 23, was assigned to Tokyo Electron Ltd. (Tokyo).

"Sidewall inorganic passivation for dielectric etching via surface modification" was invented by Du Zhang (Albany, N.Y.), Yu-Hao Tsai (Albany, N.Y.) and Mingmei Wang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for processing a substrate that includes: performing a cyclic process including a plurality of cycles, where the cyclic process includes, forming a carbon-containing layer over sidewalls of a recess in a Si-containing dielectric layer of the substrate, the forming including exposing the substrate disposed in a plasma processing chamber to a first pla...