US Patent Issued to Tokyo Electron on June 23 for "Method for ion-assisted self-limited conformal etch" (American, Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,892, issued on June 23, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method for ion-assisted self-limited conformal etch" was invented by Adam Pranda (Albany, N.Y.), Christopher Catano (Albany, N.Y.), Yusuke Lent-Yoshida (Albany, N.Y.), Aelan Mosden (Albany, N.Y.), Yun Han (Albany, N.Y.) and Ken Kobayashi (Taiwa-cho, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device can include providing a substrate having a patterned structure comprising semiconductor materials, where the patterned structure has a side profile including indentations, such as a patterned film stack, and where a spacer layer is conforma...