US Patent Issued to Tokyo Electron on July 7 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,611, issued on July 7, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Hiroki Arai (Yamanashi, Japan) and Tadashi Mitsunari (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes forming a carbon film on a substrate by plasma CVD using a processing gas including a carbon-containing gas; and performing a plasma post-processing on the formed carbon film, thereby reducing film stress of the carbon film by plasma of the processing gas including helium gas or a mixture of helium gas and argon gas but not including hydrogen."

The ...