US Patent Issued to Tokyo Electron on July 28 for "Plasma processing method and plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,695,063, issued on July 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing apparatus" was invented by Takayuki Katsunuma (Miyagi, Japan) and Masanobu Honda (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes preparing a substrate. The substrate includes a first region and a second region providing an opening on the first region. The substrate processing method further includes forming a top deposit on a top of the second region by using a first plasma generated from a first gas. The substrate processing method further includes forming a first film on a surface...