US Patent Issued to Tokyo Electron on July 28 for "Atomic layer deposition of passivation layer" (American, Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,695, issued on July 28, was assigned to Tokyo Electron Ltd. (Tokyo).

"Atomic layer deposition of passivation layer" was invented by Du Zhang (Albany, N.Y.), Koki Mukaiyama (Miyagi, Japan), Takatoshi Orui (Hillsboro, Ore.), Tomohiko Niizeki (Miyagi, Japan), Maju Tomura (Miyagi, Japan), Yoshihide Kihara (Miyagi, Japan) and Mingmei Wang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for processing a substrate that includes: forming a passivation layer over sidewalls of a recess in a carbon-containing layer over a substrate by a cyclic passivation process including a plurality of cycles, each of the plurality of cycles including, ...