ALEXANDRIA, Va., July 21 -- United States Patent no. 12,689,002, issued on July 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus, power source system, and plasma processing method" was invented by Pengkai Hong (Hsin-chu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus including a plasma processing chamber, a substrate support that is provided in the plasma processing chamber and on which a substrate is placed, a gas supply for supplying a processing gas to the plasma processing chamber, an RF power source for supplying pulsed RF power to the plasma processing chamber and/or the substrate support, and forming plasma from the processing gas,...