US Patent Issued to Tokyo Electron on July 21 for "Plasma potential adjustment circuit" (American, Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,689,001, issued on July 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma potential adjustment circuit" was invented by Qiang Wang (Austin, Texas), Shyam Sridhar (Austin, Texas), Zhiying Chen (Austin, Texas), Peter Lowell George Ventzek (Austin, Texas) and Mitsunori Ohata (Taiwa-cho, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of adjusting sheath potential of a plasma at a substrate includes applying pulsed plasma source power to a plasma electrode in contact with the plasma while applying pulsed bias power to the substrate, measuring electric potential produced by the pulsed plasma source power and the pulsed bias power to obta...