US Patent Issued to Tokyo Electron on July 21 for "Method and device for forming tungsten film, and device for forming intermediate film before forming tungsten film" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,914, issued on July 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method and device for forming tungsten film, and device for forming intermediate film before forming tungsten film" was invented by Kensaku Narushima (Nirasaki City, Japan), Takanobu Hotta (Nirasaki City, Japan) and Takuya Kawaguchi (Nirasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The formation of a tungsten film is promoted when forming the tungsten film using tungsten chloride on an upper layer side of a titanium silicon nitride film. A titanium silicon nitride film is formed on one surface side of a semiconductor wafer as a substrate, and an intermediate fil...