US Patent Issued to Tokyo Electron on July 21 for "Device and method of forming 3D U-shaped nanosheet cfet" (Florida, Texas Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,259, issued on July 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Device and method of forming 3D U-shaped nanosheet cfet" was invented by H. Jim Fulford (Marianna, Fla.), Mark I. Gardner (Cedar Creek, Texas) and Partha Mukhopadhyay (Oviedo, Fla.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a working surface and a transistor formed in the substrate. The transistor includes a complex channel structure including a main portion extending in a main direction along the working surface, and tail portions each connected to a respective end of the main portion and extending along the working surface i...