US Patent Issued to Tokyo Electron on July 14 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,683,120, issued on July 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Atsutoshi Inokuchi (Miyagi, Japan), Yasuhiko Saito (Miyagi, Japan) and Kiyoshi Maeda (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method for a substrate processing device includes (a) supplying a process gas with specific conditions to a processing container having therein a stage on which a workpiece having an etching target film and a mask on the etching target film is placed, (b) performing a plasma processing on the workpiece with first plasma generated from ...