ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,987, issued on Feb. 24, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing system" was invented by Kyuri Motokawa (Miyagi, Japan), Yuya Minoura (Miyagi, Japan), Muneyuki Omi (Miyagi, Japan), Koki Tanaka (Miyagi, Japan), Ryu Nagai (Miyagi, Japan) and Nobuhiko Shirahama (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing method includes (a) forming a first protective film on a surface of an inner member of a chamber by a first processing gas including a precursor gas that does not contain halogen; and (b) performing plasma processing on a processing target that is carried in insid...