ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,348, issued on Feb. 24, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus" was invented by Shinya Ishikawa (Miyagi, Japan) and Daiki Hariu (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and seco...