US Patent Issued to Tokyo Electron on Feb. 17 for "Plasma processing apparatus and semiconductor device manufacturing method" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,555,751, issued on Feb. 17, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and semiconductor device manufacturing method" was invented by Takaaki Kato (Nirasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus generating plasma by electromagnetic waves supplied into a processing container to process a substrate, includes an upper electrode disposed in an upper portion of the processing container, a power supply member connected to the upper electrode to supply electromagnetic waves to the upper electrode, a first shield member and a second shield member configured to electrically shield the u...