US Patent Issued to Tokyo Electron on Feb. 17 for "Inverted cross-couple for top-tier FET for multi-tier gate-on-gate 3DI" (New York, Vermont Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,377, issued on Feb. 17, was assigned to Tokyo Electron Ltd. (Tokyo).

"Inverted cross-couple for top-tier FET for multi-tier gate-on-gate 3DI" was invented by Daniel Chanemougame (Niskayuna, N.Y.), Lars Liebmann (Mechanicsville, N.Y.), Jeffrey Smith (Clifton Park, N.Y.) and Paul Gutwin (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the present disclosure provide a multi-tier semiconductor structure. For example, the semiconductor structure can include a lower semiconductor device tier including lower semiconductor devices, an upper semiconductor device tier disposed over the lower semiconductor device tier and including upp...