US Patent Issued to Tokyo Electron on Aug. 25 for "Substrate processing method and substrate processing apparatus" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,079, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Kouzou Tachibana (Koshi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method of cleaning a substrate having a patterned Si film while removing an oxide on the Si film includes removing the oxide by supplying a cleaning liquid containing hydrofluoric acid and water to the substrate while rotating the substrate; and mixing an organic solvent, which has miscibility with the water and has a lower surface tension than the water, into the cleaning liquid. The mixing of the orga...