US Patent Issued to Tokyo Electron on Aug. 25 for "Plasma processing method and plasma processing apparatus" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,032, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing apparatus" was invented by Ikko Tanaka (Kurokawa-gun, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing method includes (a) placing a substrate onto a substrate support surface of a substrate support in a chamber in a plasma processing apparatus. The plasma processing method further includes (b) etching a film on the substrate with plasma. The plasma processing method further includes (c) cleaning the chamber with plasma. In (b) and (c), a bias voltage including a pulse of a direct current voltage and having a p...