ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,027, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo).
"Plasma processing apparatus" was invented by Takahiro Shindo (Nirasaki City, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a plasma processing apparatus comprising: a chamber; a gas supply configured to supply a processing gas into the chamber; an exhaust device configured to exhaust a gas within the chamber; a substrate support including a lower electrode electrically floating from a ground potential and provided within the chamber; an upper electrode provided above the substrate support; a power supply electrically connected to the upper electrode and co...