US Patent Issued to Tokyo Electron on Aug. 25 for "Manufacturing method for semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,064, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Manufacturing method for semiconductor device" was invented by Kiyotaka Imai (Tokyo), Motoyuki Sato (Tokyo), Yoshihiro Hirota (Tokyo) and Takuya Higuchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method for a semiconductor device including a first semiconductor element and a second semiconductor element, includes the steps of forming an insulating layer on a first substrate having a first elastic modulus higher than a second elastic modulus, forming a first semiconductor element having a first bonding surface on the insulating layer, forming a second sem...