US Patent Issued to Tokyo Electron on Aug. 11 for "Plasma etching with metal sputtering" (New York Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,287, issued on Aug. 11, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma etching with metal sputtering" was invented by Minjoon Park (Albany, N.Y.) and Andrew Metz (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of etching a substrate that includes: loading the substrate into a plasma etch chamber, the substrate including a patterned hard mask layer and an underlying layer, the plasma etch chamber including a chamber part having a surface including a refractory metal, and a first electrode; flowing a process gas including fluorine and carbon into the plasma etch chamber; applying a source power to the first electrode of the...