ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,933, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo).

"Semiconductor devices and methods of manufacturing the same" was invented by Jason Marion (Albany, N.Y.), Alexander Kaiser (Albany, N.Y.), Yusuke Yoshida (Albany, N.Y.) and Yun Han (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a semiconductor substrate and forming a fin protruding from the semiconductor substrate. The method includes forming a silicon-containing layer over the fin. The method further includes patterning the silicon-containing layer to form a gate structure over the fin, where patterning the silicon-containing layer is imp...