US Patent Issued to Tokyo Electron on April 7 for "Methods and structures for improving etch profile of underlying layers" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,932, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods and structures for improving etch profile of underlying layers" was invented by Shihsheng Chang (Albany, N.Y.), Yen-Tien Lu (Albany, N.Y.), Du Zhang (Albany, N.Y.), Kai-Hung Yu (Albany, N.Y.) and David L O'Meara (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and corresponding methods of manufacture are disclosed. The method may include forming a first hardmask layer over a substrate. The method may include forming a second hardmask layer over the first hardmask layer. The method may include transferring a pattern from the second hardmask...