US Patent Issued to Tokyo Electron on April 7 for "Hardmask integration for high aspect ratio applications" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,964, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo).

"Hardmask integration for high aspect ratio applications" was invented by Joshua Baillargeon (Albany, N.Y.) and Jinying Lin (Watervliet, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor devices is disclosed. The method includes forming a stack over a substrate. The method includes forming a hardmask layer over the stack, the hardmask layer comprising a first tungsten containing sub-layer, and at least one compressive sub-layer and at least one tensile sub-layer. The method includes forming a patternable layer over the hardmask layer. The me...