US Patent Issued to Tokyo Electron on April 21 for "Substrate processing apparatus, processing gas concentrating apparatus, and substrate processing method" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,606,910, issued on April 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing apparatus, processing gas concentrating apparatus, and substrate processing method" was invented by Muneo Harada (Osaka, Japan) and Tsuneyuki Okabe (Yamanashi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing apparatus includes: a chamber; a raw material tank in which a raw material of a processing gas is accommodated; a carrier gas supply unit that supplies a carrier gas to the raw material tank; a mixed gas flow path connected to the raw material tank, and through which a mixed gas of the processing gas obtained from the raw mate...