US Patent Issued to Tokyo Electron on April 21 for "Method for etching film and plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,287, issued on April 21, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method for etching film and plasma processing apparatus" was invented by Tomohiko Niizeki (Miyagi, Japan), Takayuki Katsunuma (Miyagi, Japan), Yoshihide Kihara (Miyagi, Japan) and Maju Tomura (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching apparatus includes: a chamber; a substrate support disposed in the chamber; one or more heaters disposed in the substrate support; a gas supply; a plasma generator; a controller configured to perform an etching process comprising a plurality of cycles; and a heater controller. Each cycle includes: controlling the gas s...