ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,258, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Natsumi Torii (Miyagi, Japan) and Koichi Nagami (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes: a chamber; a substrate support disposed in the chamber, the substrate support including a lower electrode; an edge ring disposed to surround a substrate on the substrate support; an upper electrode disposed above the substrate support; a first RF power supply; a first DC power supply; and a controller configured to cause: (a) starting supply of a first RF pow...